| 摘要 |
PROBLEM TO BE SOLVED: To enable dicing of a semiconductor wafer which is thinned and has a metal film formed on one principal surface by grinding only an inner peripheral part of the one principal surface, and which prevents clogging of a dicing blade.SOLUTION: A semiconductor device manufacturing method comprises: forming a semiconductor element in each of a plurality of element regions 12 arranged along a dicing line 20 on a first principal surface P1 of a semiconductor wafer 10; grinding a second principal surface P2 of the semiconductor wafer 10 on the opposite side to the first principal surface P1 in a manner such that an outer periphery of the second principal surface P2 becomes thicker than an inner periphery; forming a metal film 50 on the second principal surface P2 ground in the grinding process so as to avoid a space on the dicing line 20; and cutting the semiconductor wafer 10 from the second principal surface P2 side along a non-formed part of the metal film 50 on the dicing line 20. |
