SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To inhibit the occurrence of leakage current to achieve an SiC semiconductor device with a gate oxide film having higher reliability.SOLUTION: In composition of a vertical MOSFET having a trench gate structure 9 by using an ntype substrate 1 and the like having an off angle to a (0001) plane or a (000-1) plane, a gate oxide film 7 is formed after forming a trench 6 without performing a sacrificial oxidation process. By doing this, the vertical MOSFET needs not be influenced by the sacrificial oxidation process and can inhibit the partial occurrence of leakage current in the trench gate structure 9 thereby to enable achievement of an SiC semiconductor device with a gate oxide film 7 having higher reliability.