发明名称 |
BEAM SHAPERS, ANNEALING SYSTEMS EMPLOYING THE SAME, METHODS OF HEAT TREATING SUBSTRATES AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES |
摘要 |
A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof. |
申请公布号 |
US2014076867(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201313790573 |
申请日期 |
2013.03.08 |
申请人 |
KIM SANGHYUN;ROMAN CHALYKH;PARK JONGJU;LEE DONGGUN;KIM SEONGSUE |
发明人 |
KIM SANGHYUN;ROMAN CHALYKH;PARK JONGJU;LEE DONGGUN;KIM SEONGSUE |
分类号 |
H01L21/027;B23K26/00;B23K26/02;B23K26/06 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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