发明名称 |
MONOLITHIC THREE TERMINAL PHOTODETECTOR |
摘要 |
Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative. |
申请公布号 |
US2014077327(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201313899896 |
申请日期 |
2013.05.22 |
申请人 |
NA YUN-CHUNG N.;KANG YIMIN |
发明人 |
NA YUN-CHUNG N.;KANG YIMIN |
分类号 |
H01L31/02;H01L31/105 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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