FET-BASED BIO SENSOR USING OHMIC JUNCTION

摘要

A highly sensitive FET-based biosensor of the present invention comprises: a substrate; an insulation layer formed on the substrate; a thin-film pattern which is formed on the insulation layer with a constant thickness, and which includes source and drain regions at both sides thereof and a detection channel region that connects the source and drain regions; and source and drain electrodes for forming an ohmic junction on the source and drain regions, respectively, wherein the thin-film pattern is a p type, the source and drain regions include a central region and a surrounding region, and the central region is a p+ type of relatively higher density than the p type of the surrounding region. According to the present invention, since a silicon region contacting a metal electrode is doped with high density, an on-current can be improved at both an n channel and a p channel. In addition, the biosensor operates to be ambipolar, thereby being distinguished from a field effect due to noise, which operates regardless of a channel change.