SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate including first and second areas and first and second transistors formed on the first and second areas, respectively. The first transistor includes a first gate insulating layer pattern and the second transistor includes a second gate insulating layer pattern. The first and second transistors include work function control layer patterns equal to each other and gate metal patterns equal to each other. A concentration of metal included in the first gate insulating layer pattern for controlling a threshold voltage of the first transistor is different from that of metal included in the second gate insulating layer pattern for controlling a threshold voltage of the second transistor.