GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE AND RECTIFIER DIODE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor crystal, a group III nitride semiconductor substrate, a group III nitride semiconductor free-standing substrate, a nitride semiconductor device and a rectifier diode that enable high voltage resistance and low on-resistance having low carrier concentration.SOLUTION: A group III nitride semiconductor crystal contains a donor type impurity and has a hydrogen concentration in the crystal of 2.0E+16 cmor less. In the region of the donor type impurity at the concentration of 1.0E+17 cmor less, the concentration of the donor type impurity and a carrier concentration have a proportional relationship.