| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing contact resistance between a wiring layer and a contact.SOLUTION: An insulator film 13 has a hole 14. A catalytic layer 16 is formed on a bottom surface of the hole, a side surface of the hole, and on the insulator film outside the hole. A contact 17 is formed on the catalytic layer on the bottom surface of the hole by a carbon nanotube. A wiring layer 18 is formed on the catalytic layer outside the hole by graphene contacting with the carbon nanotube. The catalytic layer of the bottom part of the hole is a discontinuous film and the catalytic layer outside the hole is a continuous film. |
