发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a semiconductor device includes forming a gate pattern on a substrate, and etching sides of the gate pattern using a first wet-etching process to form a first recess. The first wet-etching process includes using an etchant containing a first chemical substance including a hydroxyl functional group (—OH) and a second chemical substance capable of oxidizing the substrate. The concentration of the second chemical substance is 1.5 times or less the concentration of the first chemical substance. |
申请公布号 |
US2014080296(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201313944087 |
申请日期 |
2013.07.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAEK JAE-JIK;CHA JI-HOON;YOON BO-UN;LEE KWANG-WOOK;HAN JEONG-NAM |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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