| 摘要 |
Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell. |
