| 摘要 |
A method of forming an apparatus includes forming a plurality of deep trenches and a plurality of shallow trenches in a first region of a substrate. At least one of the shallow trenches is positioned between two deep trenches. The shallow trenches and the deep trenches are parallel to each other. A layer of conductive material is deposited over the first region and a second region of the substrate. The layer of conductive material is etched to define lines separated by gaps over the first region of the substrate, and active device elements over the second region of the substrate. The second region of the substrate is masked and the lines are removed from the first region of the substrate. Elongate trenches are etched where the lines were removed in the while the second region of the substrate is masked. |
