METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide substrate (100) is provided with a trench (TR) that has a side wall (SW) and a bottom (BT). A trench insulating film (201A) that covers the bottom (BT) and the side wall (SW) is formed. A silicon film (201S) that fills the trench with the trench insulating film (201A) being therebetween is formed. The silicon film (201S) is etched so that a portion of the silicon film (201S), said portion being positioned above the bottom (BT) with trench insulating film (201A) therebetween, remains. The trench insulating film (201A) on the side wall (SW) is removed. A bottom insulating film is formed by oxidizing the silicon film (201S). A side wall insulating film is formed on the side wall (SW).