| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability.SOLUTION: A magnetoresistive effect element of an embodiment includes a memory layer 31 having a magnetic anisotropy in a direction perpendicular to a film surface and a variable magnetization direction, a reference layer 33 having a magnetic anisotropy in a direction perpendicular to a film surface and an invariable magnetization direction, and a tunnel barrier layer 32 arranged between the memory layer and the reference layer. The tunnel barrier layer 32 includes a first layer arranged in a central portion, and a second layer arranged at a periphery portion and having at least B and O as main components. |
