| 摘要 |
<p>Provided is a semiconductor device which is suited to miniaturization. This semiconductor device comprises: an active region that extends in a first direction; and a first semiconductor pillar, a second semiconductor pillar and a third semiconductor pillar, which are sequentially aligned in the first direction so as to stand on a main surface of the active region. This semiconductor device also comprises, between the first semiconductor pillar and the second semiconductor pillar, a first gate insulating film that is in contact with the lateral surface of the first semiconductor pillar, a first gate electrode that is in contact with the first gate insulating film, a second gate insulating film that is in contact with the lateral surface of the second semiconductor pillar, a second gate electrode that is in contact with the second gate insulating film, and a first buried insulating film that is positioned between the first gate electrode and the second gate electrode. This semiconductor device also comprises a second buried insulating film between the first semiconductor pillar and the third semiconductor pillar, said second buried insulating film being in contact with the respective lateral surfaces of the first and third semiconductor pillars.</p> |
