| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode in which Zener voltage has low temperature dependence and which can have a sufficiently high Zener voltage value.SOLUTION: In a diode of the present embodiment, a diode element 32 in which a plurality of N-type regions 32a, 32c and a plurality of P-type regions 32b, 32d alternately form PN junctions in series is formed on an insulating substrate 31. According to this configuration, since an equivalent circuit in which each of a plurality of diodes is reversely connected to the adjacent diode in series is formed, one pair of reversely connected opposite diodes mutually cancel temperature characteristics thereby to decrease temperature dependence of Zener voltage. In addition, since the N-type regions and the P-type regions are formed on the insulating substrate 31, it can be easily achieved to increase withstanding voltage of the insulating substrate 31, and further, by increasing the number of PN junctions, the diode can have sufficiently high Zener voltage. |
