| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-output semiconductor light-emitting device that emits light in the far-infrared region.SOLUTION: A semiconductor light-emitting device radiates emission light by energy relaxation of electrons between sub-bands of a plurality of quantum wells. The semiconductor light-emitting device comprises: an active layer provided in a stripe shape to extend in a direction parallel to the radiation direction of the emission light and including the plurality of quantum well; and a pair of cladding layers provided on and under the active layer along the long side of the stripe-shaped active layer, and having a light absorption peak in a wavelength range different from the wavelength of the emission light. At least one of the pair of cladding layers contains a material having a lattice constant different from the active layer. |
