| 摘要 |
In order to passivate the crystalline silicon substrate (101, 201) of a solar cell (100, 200) comprising a base (102, 202) and an emitter (103, 203), a combination layer (105, 205) is formed using the following steps: carrying out a plasma nitriding or plasma oxinitriding process in a plasma of NH3, N2O or a mixture of said gases to create a base film (105a, 205a) of amorphous SiNx or amorphous SiOxNy, and immediately carrying out a PECVD process that follows on directly after the plasma nitriding or plasma oxinitriding process and uses at least one silicon-containing process gas to deposit a top silicon layer (105b, 205b) of amorphous SiNx, amorphous SiCxNy or amorphous SiOxNy. |
