| 摘要 |
When conventional substrate processing apparatus producing plasma treated grooves of which the aspect rate is high, it was hard to form a cover of which the step coverage was good. To solve this problem, the present invention comprises: a plasma producing space for producing plasma; a substrate processing chamber containing a substrate processing space into which a substrate is inserted when the substrate is treated, interlocked with the plasma producing space; an induction combining structure several times longer than electricity wavelength in which electric length is inserted matched with a wavelength adjustment circuit which is in contact with the coil, arranged on the outer wall of the plasma producing space; a substrate placement table for placing the substrate containing a bump of which the aspect rate is high and which contains silicon containing layers on the surface, installed inside of the substrate processing space; a substrate entrance installed on the wall of the substrate processing chamber; a substrate support elevating unit capable of elevating the substrate placement table for the substrate placed on the placement table to be placed between the bottom of the coil and substrate entrance when processing the substrate; a gas providing unit containing an oxygen gas providing system providing oxygen containing gas for the plasma providing space; and an exhaust unit exhausting gas from the substrate processing chamber. |
