THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

摘要

There is provided a thin film transistor including: an organic semiconductor layer (40); and source (50S) and drain (50D) electrodes provided on the organic semiconductor layer. An upper end portion (41A) of a channel region of the organic semiconductor layer includes two or more types of discontinuous regions (A/B) having material compositions different from one another, the channel region being provided between the source electrode and the drain electrode.