METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve flatness of an insulating film in a method of manufacturing a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming a first insulating film 10 in a first region I including a peripheral edge of a semiconductor substrate 1 and in a second region II located closer toward the center of the semiconductor substrate 1 than the first region I; forming slots 10a on the first insulating film 10 in the second region II ; forming a barrier metal film 14 on the first insulating film 10 after the step of forming the slots 10a; forming a second metal film 16 on the barrier metal film 14 in the second region II; forming a first film 20 whose polishing rate is smaller than the second metal film 16, on the first metal film 14 in the first region I; and removing the second metal film 16 by polishing after the step of forming the first film 20 so that the second metal film 16 is left within the slots 10a in the second region II.