| 摘要 |
In a heat treatment apparatus, crystallization can be performed at a relatively low temperature, thereby limiting size of a crystal grain diameter even when a long period of time such as several dozen hours is taken. The heat treatment apparatus is provided with a first temperature mechanism having a heater heating a base material on the back side of the base material as well as a mechanism cooling the front surface of the base material by using coolant on the front surface side of the base material, a second temperature mechanism heating the front surface side of the base material by using any of atmospheric plasma unit, laser and a flash lamp, a third temperature mechanism having a heater heating the base material from the front surface side of the base material, in which the first to third temperature mechanisms are sequentially arranged in this order, and a movement mechanism relatively moves the first to third temperature mechanisms. |
