LIGHT EMITTNG DEVICE

摘要

Provided is a light emitting device comprising: a substrate; an ultraviolet (UV) light emitting semiconductor structure on the substrate; and an intermediate layer between the UV light emitting semiconductor structure and the substrate. The UV light emitting semiconductor structure includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer. At least one among the first conductive semiconductor layer and the second conductive semiconductor layer contains AlGaN. The intermediate layer contains AlN and multiple air voids in the AlN. At least some of the air voids are irregularly arranged, and 10^7 to 10^9 air voids are arranged in one square centimeter.