LIGHT EMITTING DIODE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based light emitting diode element with good luminous efficiency and suitable for an excitation light source for a white LED.SOLUTION: A GaN-based light emitting diode element (100) comprises: an n-type conductive m-plane GaN substrate (110); a light emitting diode structure (120) which is formed on the front surface of the m-plane GaN substrate by using a GaN-based semiconductor; and an n-side ohmic electrode (E100) formed on a rear surface of the m-plane GaN substrate. When a forward current applied to the light-emitting diode element is 20 mA, a forward voltage is 4.0 V or less.