| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can obtain a good quality film having less crystal grain boundary; and provide a semiconductor manufacturing apparatus used for the semiconductor device manufacturing method.SOLUTION: In a semiconductor device manufacturing method of the present embodiment, a crystal film is formed on a semiconductor substrate by irradiation of a first microwave obtained by frequency modulation or phase modulation of a first carrier wave which is a sine wave having a first frequency by using a first signal wave which is a sine wave or a pulse wave having a third frequency lower than the first frequency and a second microwave obtained by frequency modulation or phase modulation of a second carrier wave which is a sine wave having a second frequency higher than the first frequency by using a second signal wave which is a sine wave or a pulse wave having a fourth frequency lower than the second frequency. |
