发明名称
摘要 PROBLEM TO BE SOLVED: To reduce noise as much as possible when signals are read. SOLUTION: An infrared solid-state image sensor includes infrared detection pixels 12<SB>11</SB>formed on a semiconductor substrate for detecting incident infrared light and each provided with a thermoelectric conversion unit having both an infrared absorbing film for absorbing incident infrared light and converting it into heat and a first thermoelectric conversion element 14 for converting heat converted by the infrared absorbing film into electric signals; signal lines 18<SB>1</SB>to which one end of the first thermoelectric conversion element 14 is connected for reading electric signals from the infrared detection pixels; amplifiers 31<SB>1</SB>for amplifying electric signals read from the signal lines; and reference pixels 11<SB>1</SB>each having a second thermoelectric conversion element 14 of which one end is connected to a signal line and serially connected to a first thermoelectric conversion element 14. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP5443800(B2) 申请公布日期 2014.03.19
申请号 JP20090070049 申请日期 2009.03.23
申请人 发明人
分类号 G01J1/02;G01J1/42;G01J5/48 主分类号 G01J1/02
代理机构 代理人
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