发明名称 |
Method for manufacturing a mono-crystalline layer of germanium or aluminium on a substrate |
摘要 |
<p>The present invention is related to a method for growing a layer of a mono-crystalline material such as germanium on a substrate comprising
- loading a substrate having an exposed area made of a first mono-crystalline material in a process chamber,
- supplying a beam of neutral species of a second material towards the substrate in the presence of a diffusion limiting gas, such that the pressure in the process chamber is between 1x10 -6 torr and 1x10 -4 torr, so that the neutral species of the second material are adsorbed on the exposed area, thereby growing a mono-crystalline layer of said second material overlying and in contact with the first mono-crystalline material
wherein said diffusion limiting gas is a non-reactive gas.</p> |
申请公布号 |
EP2275591(B1) |
申请公布日期 |
2014.03.19 |
申请号 |
EP20090165215 |
申请日期 |
2009.07.10 |
申请人 |
IMEC |
发明人 |
LIETEN, RUBEN;DEGROOTE, STEFAN |
分类号 |
C30B23/02;C30B29/02;C30B29/08;H01L21/02 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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