发明名称 |
PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL |
摘要 |
This invention reduces planar defects which occur within a silicon carbide single crystal when a silicon carbide single crystal is epitaxially grown on a single crystal substrate. The process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is epitaxially grown on the surface of a single crystal substrate is a process in which a plurality of undulations that extend in a single, substantially parallel direction on the substrate surface is formed on the single crystal substrate surface; undulation ridges on the single crystal substrate undulate in the thickness direction of the single crystal substrate; and the undulations are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other. |
申请公布号 |
EP1889953(A4) |
申请公布日期 |
2014.03.19 |
申请号 |
EP20060756481 |
申请日期 |
2006.05.23 |
申请人 |
HOYA CORPORATION |
发明人 |
KAWAHARA, TAKAMITSU;NAGASAWA, HIROYUKI;HATTA, NAOKI;YAGI, KUNIAKI |
分类号 |
C30B29/36;C23C16/02;C23C16/32;C23C16/455;C30B23/02;C30B25/02;C30B25/18 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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