发明名称
摘要 <p>A radiation detector is disclosed, for the detection of radiation (8), with a given spectral sensitivity distribution (9), which has a maximum at a given wavelength lambdao, comprising a semiconductor body (1) with an active region (5), provided for detector signal generation and for the incident radiation. In one embodiment, the active region (5) comprises a number of functional layers (4a, 4b, 4c, 4d), with differing band gaps and/or thicknesses and embodied such that said layers (4a, 4b, 4c, 4d) at least partly absorb radiation at a wavelength greater than lambdao. In a further embodiment, a filter layer structure (70) is arranged after the active region, comprising at least one filter layer (7, 7a, 7b, 7c). The filter layer structure determines the short wave side (101) of the detector sensitivity (10), according to the given spectral sensitivity distribution (9), by means of absorption of wavelengths less than lambdao. A radiation detector for the detection of radiation (8), according to the spectral sensitivity distribution (9) of the human eye is also disclosed. The semiconductor body can be monolithically integrated.</p>
申请公布号 JP5447756(B2) 申请公布日期 2014.03.19
申请号 JP20070505365 申请日期 2005.03.10
申请人 发明人
分类号 H01L31/10;H01L31/0216;H01L31/0687 主分类号 H01L31/10
代理机构 代理人
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