PLASSMA ENHANCED CHEMICAL VAPOUR DEPOSITION APPARATUS AND PLASSMA ENHANCED CHEMICAL VAPOUR DEPOSITION METHOD

摘要

The present invention relates to a plasma enhanced chemical vapor deposition apparatus and a method thereof. The apparatus includes a vacuum chamber including a substrate holder for mounting a substrate, a dielectric tube of which end is mounted in a through hole formed on the upper surface of the vacuum chamber, a plasma generation part surrounding the dielectric tube and generating plasma in the dielectric tube by receiving RF power, and a vapor source supplying metallic vapor to the dielectric tube. A metal-nitride layer or a metal-oxide layer is formed by supplying the metallic vapor passing through the plasma to the substrate. [Reference numerals] (AA) First gas; (BB) Second gas