SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a semiconductor device and a method of fabricating the same. More particularly, the present invention provides a semiconductor device capable of improving signal transmission speed. According to the embodiment of the present invention, the semiconductor device includes an air gap region by conductive patterns and a capping layer which covering the upper surface of them. According to the embodiment of the present invention, the method of fabricating a semiconductor device automatically forms a support pattern in a region of a wide gap among the gaps between the conductive patterns.