发明名称 Antiferromagnetic storage device
摘要 An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero, two or more stable magnetic states, and an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities. An antiferromagnetic nanostructure according to another embodiment includes multiple arrays each corresponding to a bit. Each array has at least eight antiferromagnetically coupled magnetic atoms. Each array has at least two readable magnetic states that are stable for at least one picosecond. Each array has a net magnetic moment of zero or about zero. No external stabilizing structure exerts influence over the arrays for stabilizing the arrays. Each array has 100 atoms or less along a longest dimension thereof.
申请公布号 GB201401831(D0) 申请公布日期 2014.03.19
申请号 GB20140001831 申请日期 2012.08.21
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人
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