| 摘要 |
Provided are a method for depositing tungsten bulk layers with low roughness and low resistivity and a related device. According to various embodiments, a method includes the CVD deposition of tungsten at high temperatures and high pressures. In some embodiments, CVD deposition is generated when alternate nitrogen gas pulses exist. The alternate parts of a layer are deposited by the CVD when nitrogen does not exist and nitrogen exists. [Reference numerals] (301) Deposit a tungsten nucleation layer on a substrate; (303) Perform treatment on the nucleation layer to improve resistivity(optional); (305) Deposit CVD of tungsten at low temperature and/or no N2(optional); (307) Deposit bulk tungsten by H2 reduction CVD with alternating pulses of N2 at high temperature and/or pressure |
