发明名称 |
NANOWIRE TUNNEL DIODE AND METHOD FOR MAKING THE SAME |
摘要 |
The present invention provides a tunnel diode and a method for manufacturing thereof. The tunnel diode comprises a p-doped semiconductor region and an n-doped semiconductor region forming a pn-junction at least partly within a nanowire where semiconductor materials on different sides of the pn-junction are different such that a heterojuction is formed. The materials of the nanowire may be compound semiconductor materials. The heterojunction tunnel diode can be of type-I (Straddling gap), type-II (Staggered gap) or type-III (Broken gap). |
申请公布号 |
EP2491595(A4) |
申请公布日期 |
2014.03.19 |
申请号 |
EP20100825300 |
申请日期 |
2010.10.22 |
申请人 |
SOL VOLTAICS AB |
发明人 |
BORGSTROEM, MAGNUS;HEURLIN, MAGNUS;FAELT, STEFAN |
分类号 |
H01L29/885;B82B1/00;H01L29/06;H01L31/0352 |
主分类号 |
H01L29/885 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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