| 发明名称 |
METAL ELECTRODE AND SEMICONDUCTOR ELEMENT USING THE SAME |
| 摘要 |
<p>A metal electrode is used for a pair with a semiconductor so as to sandwich a high-dielectric constant thin film between the metal electrode and the semiconductor. A metal electrode 13 comprises a metal film 11 formed of a first electrode material, and a characteristic control film 10 containing a second electrode material. The characteristic control film 10 is formed between the high-dielectric constant thin film 9 and the metal film 11. C is added to the characteristic control film 10. The addition of C reduces the crystal grain diameter of the material constituting the characteristic control film 10, and suppresses fluctuation of a Vth (threshold voltage).</p> |
| 申请公布号 |
EP2237320(B1) |
申请公布日期 |
2014.03.19 |
| 申请号 |
EP20080858001 |
申请日期 |
2008.12.05 |
| 申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
OHMORI, KENJI;CHIKYO, TOYOHIRO |
| 分类号 |
H01L29/78;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/423;H01L29/49;H01L29/51 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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