| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin wafer manufacturing method of simultaneously establishing grinding resistance in reverse-surface grinding of a wafer, high temperature heat resistance for heat applied during the process that followed, chemical resistance during plating or etching, smooth peeling of the processed wafer from a support substrate, and excellent removability of adhesive layer residue on a wafer surface after the peeling. SOLUTION: The thin wafer manufacturing method comprises: (A) a step of bonding a wafer including a circuit forming surface and a circuit non-forming surface to the support substrate so that the circuit forming surface contacts an adhesive layer including a polyimide silicone resin via the adhesive layer; (B) a step of grinding the circuit non-forming surface of the wafer bonded to the support substrate; (C) a step of processing the wafer whose circuit non-forming surface was ground; (D) a step of peeling the processed wafer from the support substrate; and (E) a step of removing the adhesive layer remaining on the circuit forming surface of the peeled wafer. COPYRIGHT: (C)2012,JPO&INPIT |
