| 摘要 |
<p>A method of making a thin film transistor device includes: forming a semiconductor layer (51), a dielectric layer (52), and a gate-forming layer (53) on the dielectric layer (52) to define a layered structure (50), forming a gray scale photoresist pattern (54) on the gate-forming layer (53), stripping the gray scale photoresist pattern (54) isotropically to cause removal of source and drain defining regions (542, 543), etching the gate-forming layer (53) anisotropically so as to remove source and drain covering region (532, 533), doping a first type dopant into source and drain regions (511, 512), and removing a gate defining region (541) from the gate-forming layer (53).</p> |
