| 摘要 |
The present invention relates to an e-fuse OTP memory structure having an increased sensing voltage. In the OTP memory structure using an e-fuse method, an unprogrammed e-fuse cell reduces a reading current flowing through an e-fuse link. A programmed e-fuse includes a word line (WL) voltage distributor circuit with a large bit line sensing voltage. Therefore, the sensing errors of the e-fuse cell are prevented. |
