发明名称 DUAL DELIVERY CHAMBER DESIGN
摘要 A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.
申请公布号 KR20140034115(A) 申请公布日期 2014.03.19
申请号 KR20137012729 申请日期 2011.09.28
申请人 APPLIED MATERIALS, INC. 发明人 IYENGAR PRAHALLAD;BALUJA SANJEEV;DUBOIS DALE R.;ROCHA ALVAREZ JUAN CARLOS;NOWAK THOMAS;HENDRICKSON SCOTT A.;LEE, YONG WON;SHEK MEI YEE;XIA LI QUN;WITTY DEREK R.
分类号 H01L21/205 主分类号 H01L21/205
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