发明名称 |
DUAL DELIVERY CHAMBER DESIGN |
摘要 |
A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead. |
申请公布号 |
KR20140034115(A) |
申请公布日期 |
2014.03.19 |
申请号 |
KR20137012729 |
申请日期 |
2011.09.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
IYENGAR PRAHALLAD;BALUJA SANJEEV;DUBOIS DALE R.;ROCHA ALVAREZ JUAN CARLOS;NOWAK THOMAS;HENDRICKSON SCOTT A.;LEE, YONG WON;SHEK MEI YEE;XIA LI QUN;WITTY DEREK R. |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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