发明名称 |
Nanoneedle plasmonic photodetectors and solar cells |
摘要 |
The present disclosure provides a method for a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400� C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (mum) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6� to 9� tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias. |
申请公布号 |
US8673680(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US201313738215 |
申请日期 |
2013.01.10 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CHUANG CHIH-WEI;CHANG-HASNAIN CONNIE;SEDGWICK, IV FORREST GRANT;KO WAI SON |
分类号 |
H01L21/00;H01L31/072;H01L31/18 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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