发明名称 Film deposition apparatus and substrate processing apparatus
摘要 A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.
申请公布号 US8673079(B2) 申请公布日期 2014.03.18
申请号 US20090550453 申请日期 2009.08.31
申请人 KATO HITOSHI;HONMA MANABU;HANEISHI TOMOKI;TOKYO ELECTRON LIMITED 发明人 KATO HITOSHI;HONMA MANABU;HANEISHI TOMOKI
分类号 C23C16/455;C23C16/00 主分类号 C23C16/455
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