发明名称 |
finFET eDRAM strap connection structure |
摘要 |
A method of forming a strap connection structure for connecting an embedded dynamic random access memory (eDRAM) to a transistor comprises forming a buried oxide layer in a substrate, the buried oxide layer defining an SOI layer on a surface of the substrate; forming a deep trench through the SOI layer and the buried oxide layer in the substrate; forming a storage capacitor in a lower portion of the deep trench; conformally doping a sidewall of an upper portion of the deep trench; depositing a metal strap on the conformally doped sidewall and on the storage capacitor; forming at least one fin in the SOI layer, the fin being in communication with the metal strap; forming a spacer over the metal strap and over a juncture of the fin and the metal strap; and depositing a passive word line on the spacer. |
申请公布号 |
US8673729(B1) |
申请公布日期 |
2014.03.18 |
申请号 |
US201213705477 |
申请日期 |
2012.12.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BASKER VEERARAGHAVAN S.;LEOBANDUNG EFFENDI;YAMASHITA TENKO;YEH CHUN-CHEN |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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