发明名称 |
Non-volatile memory devices |
摘要 |
A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a ground select line crossing the active region, and a string select line crossing the active region and spaced apart from the ground select line. A plurality of memory cell word lines may cross the active region between the ground select line and the string select line with about a same first spacing provided between adjacent ones of the plurality of word lines and between a last of the plurality of memory cell word lines and the string select line. A second spacing may be provided between the ground select line and a first of the plurality of memory cell word lines. |
申请公布号 |
US8675409(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US201213463060 |
申请日期 |
2012.05.03 |
申请人 |
SEL JONG-SUN;CHOI JUNG-DAL;PARK YOUNG-WOO;PARK JIN-TAEK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEL JONG-SUN;CHOI JUNG-DAL;PARK YOUNG-WOO;PARK JIN-TAEK |
分类号 |
G11C11/34;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|