发明名称 Multi-energy ion implantation
摘要 In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.
申请公布号 US8673753(B1) 申请公布日期 2014.03.18
申请号 US201213692815 申请日期 2012.12.03
申请人 ADVANCED ION BEAM TECHNOLOGY, INC. 发明人 WAN ZHIMIN
分类号 H01L21/425 主分类号 H01L21/425
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