发明名称 Method and system for charged particle beam lithography
摘要 There is disclosed a lithography method and system implemented by a charged particle beam passed through a shaping slit member having plural circular apertures of different diameters. The method and system operate to delineate a circular pattern by shooting the shaped circular beam passed through the desired circular aperture onto a workpiece. The method and system consists of causing circular beams shaped using different ones of the circular apertures to be shot onto the workpiece such that the circular beams are coincident with each other in center position to thereby delineate a circular pattern of a desired size. Consequently, circular patterns in a wide range of sizes can be obtained, although a limited number of circular apertures are used.
申请公布号 US8673542(B2) 申请公布日期 2014.03.18
申请号 US201213571533 申请日期 2012.08.10
申请人 KIUCHI TAICHI;HASEGAWA TAKAHISA;JEOL LTD. 发明人 KIUCHI TAICHI;HASEGAWA TAKAHISA
分类号 G03F7/20 主分类号 G03F7/20
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