| 摘要 |
A semiconductor memory device includes a plurality of memory cell data holding transistors provided in each block; a row decoder including transfer transistors, a voltage controller and a block selector in each block, the transfer transistors electrically connected to respective of the memory cell transistors, the voltage controller connected to gates of the respective transfer transistors and transferring a desired voltage to the gates of the respective transfer transistors, the block selector electrically connected to gates of the respective transfer transistors and configured to select blocks. A voltage generator generates the voltage to be supplied to the transfer transistors; and a controller controls the row decoder and the voltage generator circuit. When data is written, the gates of the respective transfer transistors are connected to the voltage controller in each non-selected block, and the gates of the respective transfer transistors are disconnected from the voltage controller in each selected block. |
