| 摘要 |
The present invention relates to semiconductor inspection and provides a technology capable of efficiently detecting a systematic defect. In the present system, with regard to the process (S7, S8) of matching hot spot (HS) points that can be simulated in advance and defect points obtained as a result of a visual inspection each other and the unmatched defect points, a process (S6, S9) of classifying the defect points into groups based on similarity of pattern layout at the defect points to determine the defects belonging to a pattern layout where defects frequently occur, thereby reliably detecting the systematic defect. Also, with a process (S11) of acquiring an uneven distribution in a defect occurrence distribution on a wafer, the systematic defect occurring due to topography of the wafer can also be detected. |
