发明名称 Electrical device fabrication
摘要 The invention provides a method of making an electrical device, particularly a semiconductor device, having a substrate and etched electrodes formed on the substrate. The method employs flexography to print a resist pattern (7) onto a substrate (5) carrying a metal layer (8). Metal not protected by the resist can be etched away and then the resist (7) removed to leave exposed electrodes. Further materials (10, 11) can be disposed onto the exposed metal, such as organic semiconductors, to form transistors or diodes.
申请公布号 US8673681(B2) 申请公布日期 2014.03.18
申请号 US20070296772 申请日期 2007.04.11
申请人 STONE KATE JESSIE;NOVALIA LTD. 发明人 STONE KATE JESSIE
分类号 H01L21/40;H01L21/20;H01L21/22;H01L21/302;H01L21/38 主分类号 H01L21/40
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