发明名称 Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same
摘要 Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.2 and greater, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.
申请公布号 US8673399(B2) 申请公布日期 2014.03.18
申请号 US20080136716 申请日期 2008.06.10
申请人 GUERRA JOHN M.;THULIN LUKAS M.;CHANDEKAR AMOL N.;NANOPTEK CORPORATION 发明人 GUERRA JOHN M.;THULIN LUKAS M.;CHANDEKAR AMOL N.
分类号 H01L31/0224 主分类号 H01L31/0224
代理机构 代理人
主权项
地址