发明名称 |
Structure and method for using high-k material as an etch stop layer in dual stress layer process |
摘要 |
A method is provided that includes forming a high-k dielectric etch stop layer over at least a first conductivity type semiconductor device on a first portion of a substrate and at least a second conductivity type semiconductor device on a second portion of the semiconductor device. A first stress-inducing layer is deposited over the first conductivity type semiconductor device and the second conductivity type semiconductor device. The portion of the first stress-inducing layer that is formed over the second conductivity type semiconductor device is then removed with an etch that is selective to the high-k dielectric etch stop layer to provide an exposed surface of second portion of the substrates that includes at least the second conductivity type semiconductor device. A second stress-inducing layer is then formed over the second conductivity type semiconductor device. |
申请公布号 |
US8673757(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US20100913795 |
申请日期 |
2010.10.28 |
申请人 |
HENSON WILLIAM K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HENSON WILLIAM K. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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