发明名称 |
Graphite member for beam-line internal member of ion implantation apparatus |
摘要 |
The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m3 and an electric resistivity of not more than 9.5 muOmega�m. Preferably, the R value obtained by dividing D band intensity at 1370 cm-1 by G band intensity at 1570 cm-1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20. |
申请公布号 |
US8673450(B2) |
申请公布日期 |
2014.03.18 |
申请号 |
US20060084206 |
申请日期 |
2006.10.12 |
申请人 |
SAITO KIYOSHI;YOKOYAMA FUMIAKI;SUZUKI HITOSHI;ANDO ATSUKO;TOJO TETSURO;SHINOHARA SEIJI;TOYO TANSO CO., LTD. |
发明人 |
SAITO KIYOSHI;YOKOYAMA FUMIAKI;SUZUKI HITOSHI;ANDO ATSUKO;TOJO TETSURO;SHINOHARA SEIJI |
分类号 |
A61N5/00;C01B31/00;C01B31/02;C01B31/04;G21G5/00;G21K5/10;H01J37/08;H01L21/425 |
主分类号 |
A61N5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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